Description: These power semiconductors are high-speed discrete insulated gate bipolar transistors (IGBTs.) The product series utilizes a thin IGBT chip for miniaturization, thereby reducing power loss (turnoff loss) in switching operations. This helps save energy and reduce power consumption of the mounted devices. Loss in switching operation has also been reduced (suppressed heat generation) for compatibility with higher switching frequencies (20-100 kHz.)

Contact: 201-880-2145; www.americas.fujielectric.com

eProduct 189 

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